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Filter Criteria: 2025-10-16 [Thur] Room 5 (Second Floor)

Date:2025-10-16

Site:Room 5 (Second Floor)

08:30 -10:20 (UTC+8) 08:30-10:20 Local Time | B01-03
NO. Beijing Time (UTC+8) Local Time Type Presentation Topic Speaker Affiliation / Organization
1 08:30-09:00 08:30 -09:00 Keynote Presentation

Semiconductor nanowire array devices and applications

Lan Fu The Australian National University
2 09:00-09:25 09:00 -09:25 Invited Presentation

Interaction between light and optoelectronic materials

Xiaolan Zhong Beihang University
3 09:25-09:50 09:25 -09:50 Invited Presentation

InAs/GaAs Quantum-Dot Lasers on Ge/Si Virtual Substrates: Toward Scalable O-Band Sources for Integrated Photonics

Yuanhao Miao Guangdong Greater Bay Area Institute of Integrated Circuit and System Applications
4 09:50-10:05 09:50 -10:05 Oral Presentation

Rational Material Design and Interface Engineering for High-Performance Organic/Perovskite Hybrid Tandem Near-Infrared Light-Emitting Diodes

Dongying Zhou Soochow University
5 10:05-10:20 10:05 -10:20 Oral Presentation

Fabrication and Characterization of GOI and GeSnOI Transistors for Low Power Applications

Yuhui Ren Guangzhou Noor Optoelectronic Technology Co. Ltd.
10:20 -10:40 (UTC+8) 10:20-10:40 Local Time | coffee Break
10:40 -12:00 (UTC+8) 10:40-12:00 Local Time | B01-04
NO. Beijing Time (UTC+8) Local Time Type Presentation Topic Speaker Affiliation / Organization
1 10:40-11:05 10:40 -11:05 Invited Presentation

Strain-Gradient and Alloy-Disorder Engineering of Heat Transport in Wide- and Ultra-Wide-Bandgap Semiconductors

Qiye Zheng The Hong Kong University of Science and Technology (HKUST)
2 11:05-11:30 11:05 -11:30 Invited Presentation

Dynamic SIMS for Semiconductor Analysis

Yumin Gao Suzhou Weifen Technology Co. Ltd
3 11:30-11:45 11:30 -11:45 Oral Presentation

Ta-Sb-Te Phase Change Material Enabled Memory Device for Deep Neural Network Applications

Ziqi Wan Shanghai Institute of Microsystem and Information Technology
4 11:45-12:00 11:45 -12:00 Oral Presentation

High-fidelity geometric quantum gates exceeding 99.9% in germanium quantum dots

Yuchen Zhou University of Science and Technology of China
12:00 -13:30 (UTC+8) 12:00-13:30 Local Time | Lunch
13:30 -15:15 (UTC+8) 13:30-15:15 Local Time | B01-05
NO. Beijing Time (UTC+8) Local Time Type Presentation Topic Speaker Affiliation / Organization
1 13:30-13:55 13:30 -13:55 Invited Presentation

Current Challenges in Photoresist

Mark Neisser Tsinghua University
2 13:55-14:20 13:55 -14:20 Invited Presentation

Ion Beam Deposition (IBD) Technology: Precision Control and Innovative Applications

Zichao Li Jiangsu Leuven Instruments Co., Ltd.
3 14:20-14:45 14:20 -14:45 Invited Presentation

Progress of Ceria Particles in CMP Applications

Yuchun Wang Anji Microelectronics
4 14:45-15:00 14:45 -15:00 Oral Presentation

Insights into Semiconductor Device Failures: Bridging Electrical Signatures and Physical Root Causes with TEM

Binghai Liu Wintech Nanotechnology Services Pte Ltd
5 15:00-15:15 15:00 -15:15 Oral Presentation

The Effect of Frequency in AC Hot Carrier Degradation (HCD) of n-FinFET with SiO2/HfO2/TiN/TiAlC gate stack

Qingyuan Li Institute of Microelectronics, Chinese Academy of Sciences
15:15 -15:35 (UTC+8) 15:15-15:35 Local Time | coffee Break
15:35 -16:35 (UTC+8) 15:35-16:35 Local Time | B01-06
NO. Beijing Time (UTC+8) Local Time Type Presentation Topic Speaker Affiliation / Organization
1 15:35-15:50 15:35 -15:50 Invited Presentation

SiGe/Si Heteroepitaxy for CMOS and 3D DRAM

Guilei Wang Beijing SuperString Memory Research Institute
2 15:50-16:05 15:50 -16:05 Oral Presentation

Development And Validation of BEOL SiCN Film With Low H Content By PECVD

Tielu Liu Beijing SuperString Memory Research Institute
3 16:05-16:20 16:05 -16:20 Oral Presentation

A Hybrid Dual-κ Spacer Strategy for Enhanced Performance in GAA Nanosheet FETs and Circuits at 3nm Node and Beyond

Meihe Zhang Institute of Microelectronics, Chinese Academy of Sciences
4 16:20-16:35 16:20 -16:35 Oral Presentation

Process Optimization Strategy for Advanced MTJ stacks with High Tunneling Magnetoresistance and Robust Perpendicular Magnetic Anisotropy on 300-mm wafer

Haochang Lyu Beijing SuperString Memory Research Institute
16:35 -16:45 (UTC+8) 16:35-16:45 Local Time | Award