B01-Materials for Photonics and Electronics
Date：2025-10-15
Site：Room 5 (Second Floor)
| NO. | Beijing Time (UTC+8) | Local Time | Type | Presentation Topic | Speaker | Affiliation / Organization |
|---|---|---|---|---|---|---|
| 1 | 13:35-14:00 | 13:35 -14:00 | Invited Presentation |
Optical Switching Materials: A Symphony of Electrons and Photons |
JUNJUN JIA | Waseda University |
| 2 | 14:00-14:25 | 14:00 -14:25 | Invited Presentation |
Novel Low-Temperature Deposition Route for Sulfides: Reactive Sputtering with Sulfur Plasma |
Issei Suzuki | Tohoku University |
| 3 | 14:25-14:50 | 14:25 -14:50 | Invited Presentation |
3D NOR Memory:Materials and Processing technology |
Huilong Zhu | Beijing X2Chip Technologies |
| 4 | 14:50-15:15 | 14:50 -15:15 | Invited Presentation |
Hafnia-based XP-FeRAM: A Novel High-speed and Low-power Cross-point Ferroelectric Memory for Data-intensive Applications |
Qianqian Huang | Peking University |
| 5 | 15:15-15:40 | 15:15 -15:40 | Invited Presentation |
Using He ion irradiation on spintronic multilayers thin films stacks under different substrates |
sylvain Eimer | National Key Laboratory of Spin Chips and Technology |
| NO. | Beijing Time (UTC+8) | Local Time | Type | Presentation Topic | Speaker | Affiliation / Organization |
|---|---|---|---|---|---|---|
| 1 | 16:00-16:25 | 16:00 -16:25 | Invited Presentation |
Printable optical materials for 2D and 3D lithography |
Hong Liu | Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) |
| 2 | 16:25-16:50 | 16:25 -16:50 | Invited Presentation |
Directed Self-Assembly of Block Copolymers for Nanolithography |
Lingying Shi | Sichuan University |
| 3 | 16:50-17:15 | 16:50 -17:15 | Invited Presentation |
Atomic Layer Deposition of Oxide Semiconductors for Thin-Film Transistors |
Xinwei Wang | Peking University Shenzhen Graduate School |
| 4 | 17:15-17:30 | 17:15 -17:30 | Oral Presentation |
Density of States Effects on the Electrical Characteristics of Vertical Channel-All-Around InGaZnO Thin-Film Transistors |
Kunlin Cai | Shandong University |
| 5 | 17:30-17:45 | 17:30 -17:45 | Oral Presentation |
Improved Switching Reliability of Phase-change Memory Device Based on Carbon-doped Ge-rich GeSbTe Material |
Xixi Zou | Chinsese Academy of Sciences |
| 6 | 17:45-18:00 | 17:45 -18:00 | Oral Presentation |
n‑Type Metal-Oxide-Semiconductor Field-Effect Transistor Based on 100-Period Fully Strained SiGe/Si Nanostructures with Superlattice Epitaxy for Three-Dimensional Dynamic Random-Access Memory |
Ying Zhang | Beijing Superstring Memory Research Institute |
Hosted by: Chinese Materials Research Society
3rd WMC, 9th WMS & IUMRS-ICA2025
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